polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F
t
enhance broadband
performance
TM
F1208
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
40 Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
170 Watts
Junction to
Case Thermal
Resistance
1.05
o
C/W
Maximum
Junction
Temperature
200
o
C
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
50 V
Drain to
Source
Voltage
50 V
Gate to
Source
Voltage
30V
o
-65
o
C to 150
o
C
8 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
MIN
10
60
TYP
40WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
Relative
TEST CONDITIONS
Idq = 1.6 A, Vds = 12.5 V, F = 400 MHz
Idq = 1.6 A, Vds = 12.5 V, F = 400 MHz
Idq = 1.6 A, Vds = 12.5 V, F = 400 MHz
η
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
1
1.6
0.45
15
80
12
60
MIN
40
2
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids =
0.1 A,
Vgs = 0V
Vgs = 0V
Vgs = 30V
Vgs = Vds
Vds = 12.5 V,
Vds = 0 V,
Ids = 0.2 A,
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 16 A
Vgs = 20V, Vds = 10V
Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1208
POUT VS PIN GRAPH
F1208 POUT VS PIN F=400MHZ; IDQ=1.6A; VDS=12.5V
45
40
GAIN
35
30
25
13
20
15
10
Efficiency = 50%
5
0
0
1
2
3
4
5
6
7
1
0
POUT
GAIN
CAPACITANCE VS VOLTAGE
F1C 2DIE CAPACITANCE
21
19
17
15
100
1000
Coss
Ciss
POUT
11
9
7
5
10
Crss
PIN IN WATTS
5
10
15
VDS IN VOLTS
20
25
30
IV CURVE
F1C 2 DIE IV CURVE
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
Vds in Volts
ID AND GM VS VGS
F1C 2 DIE GM & ID vs VGS
100
Id
10
Gm
1
12
14
16
18
20
0.1
0
2
4
6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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